ga2o3 epitaxial wafer 2 inch

Brand Name:ZMSH

Model Number:4 inch

Place of Origin:China

... capability, 8” SiC epitaxial wafers offer unparalleled opportunities for scaling up power device production while driving down the cost per device. As demand for electric vehicles, renewable energy, and ...

Brand Name:ZMSH

Model Number:SiC Epitaxial Wafer

Place of Origin:CHINA

...epitaxial wafers - overview 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade Company Profile: As a leading SiC (Silicon Carbide) epitaxial wafer supplier, ZMSH specialize in the production, processing, and global distribution of high-quality 4H-N-type conductive and MOS-grade epitaxial wafers in 2-inch (50.8mm), 3-inch (76.2mm), 4-inch (100mm), and 6-inch...

Country/Region:china

...Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch...

Brand Name:PAM-XIAMEN

Place of Origin:China

...Wafer With Epitaxy-Ready Polished Surface , 4”, Prime Grade PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...wafer ( Gallium Antimonide ) We provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial...

Brand Name:Crystro

Model Number:CR251027-01

Place of Origin:China

... as substituting ions, which are used as the substrates for the growth of bismuth-substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim Our Company: Crystro has perfect automatic production machine, the current products are

Brand Name:Silian

Model Number:Customized

Place of Origin:Chongqing，China

6-inch sapphire substrate with good light transmittance Product Description The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) ...