to 247ac trench igbt transistor

Model Number:IRGP4063DPBF

Brand Name:Original

Place of Origin:US

Product Detail Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon Technologies Series - Packaging Tube Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic...

Brand Name:Original Factory

Model Number:AFGHL50T65SQDC

Place of Origin:CN

... generation high speed IGBT technology. Specification Of AFGHL50T65SQDC Part Number: AFGHL50T65SQDC Current - Collector (Ic) - Max: 80 A Operating Temperature(Min): -55°C (TJ) ...

Brand Name:onsemi

Model Number:AFGHL40T120RLD

...IGBT Trench Field Stop 1200 V 48 A 529 W Through Hole TO-247-3 Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: IGBT Transistors RoHS: Details Package / Case: TO-247-3 Packaging: Tube Brand: onsemi Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs

Brand Name:FAIRCHILD

Model Number:FGA25N120ANTD

Place of Origin:Philippines

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:Infineon

Model Number:AUIRG4PH50S

Place of Origin:TAIWAN

...IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 1.FEATURES Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * 2.BENEFITS Generation 4 IGBT's offer highest efficiency available IGBT...

Brand Name:FAIRCHILD

Model Number:FGA25N120ANTD

Place of Origin:USA

FGA25N120ANTD​ # TO-3P NPT Trench IGBT 25A 1200V Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C • ...

Model Number:FGA25N120ANTD

Place of Origin:original factory

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ...

Brand Name:ST

Model Number:STGW60H65DFB

Place of Origin:Original Factory

Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter ...

Brand Name:Original Manufacturer

Model Number:STGWA60H65DFB

Place of Origin:Original

... - IGBTs - Single Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IHW30N160R2FKSA1

Place of Origin:CHINA

...: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : -

Brand Name:Infineon Technoctifier Ilogies/International ReOR

Model Number:IHW30N160R2FKSA1

...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V

Brand Name:ROHM

Model Number:RGS80TSX2DHRC11

Place of Origin:Japan

RGS80TSX2DHRC11 IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N Features: ●Low Collector - Emitter Saturation Voltage ●Short Circuit Withstand Time 10μs ●Qualified to AEC-Q101 ●Built in Very Fast & Soft Recovery FRD ●Pb - free Lead Plating ; ...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG7PH42UDPBF

IRG7PH42UDPBF IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) ...

Brand Name:Fairchild Semiconductor

Model Number:FGL60N100BNTD

Place of Origin:CHINA

... Recovery Diode General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

Brand Name:Infineon Technologies

Model Number:IPB044N15N5ATMA1

Place of Origin:Germany

... Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id -

Brand Name:ADI

Model Number:IKW25N120T2FKSA1

Place of Origin:Original Brand

IKW25N120T2FKSA1 We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! Product parameters category Discrete Semiconductor Products manufacturer ...

Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVJD4152P

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting.

Categories:Transistor IC Chip

Country/Region:china

IGBT Module Trench Half Bridge Inverter 650 V 247 A 517 W Chassis Mount INT-A-PAK IGBT